| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 439 - 442 | |
| Section | X-ray based techniques | |
| DOI | https://doi.org/10.1051/epjap:2004067 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004067
Characterization of SOI wafers by synchrotron X-ray topography
1
Department of Material & Life Science, Osaka University, 2-1
Yamadaoka, Suita, Osaka 565-0871, Japan
2
Department of Precision Science and Engineering, Osaka University, 2-1
Yamadaoka, Suita, Osaka 565-0871, Japan
3
Department of Management Science, Fukui University of Technology,
3-6-1 Gakuen, Fukui, Fukui 910-8585, Japan
Corresponding author: shimura@mls.eng.osaka-u.ac.jp
Received:
9
July
2003
Accepted:
9
December
2003
Published online: 15 July 2004
Synchrotron X-ray topographs were taken for bonded silicon-on-insulator wafers. Under the grazing incident condition, the topographs of the top Si layer and the substrate are similar, which represent the variation in incident angle due to surface undulation. Furthermore, a circular concentric pattern was observed in the topographs of the top Si layer both at the grazing and higher incident angles. This shows that the concentric pattern is not due to surface undulation, but due to lattice distortion.
PACS: 61.10.-i – X-ray diffraction and scattering / 68.55.-a – Thin film structure and morphology
© EDP Sciences, 2004
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