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Cited article:

TEM observation of nanopipes in heteroepitaxial GaN

E. Jezierska, J. L. Weyher, M. Rudzinski, J. Borysiuk

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 255-258

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004061

This article has been cited by the following article(s):

Termination of hollow core nanopipes in GaN by an AlN interlayer

O. Contreras, F. Ruiz-Zepeda, M. Avalos-Borja, A. Dadgar and A. Krost
Journal of Crystal Growth 455 43 (2016)
https://doi.org/10.1016/j.jcrysgro.2016.09.027

HRTEM and LACBED of Zigzag Boundaries in GaN Epilayers

Elżbieta Jezierska and Jolanta Borysiuk
Solid State Phenomena 203-204 24 (2013)
https://doi.org/10.4028/www.scientific.net/SSP.203-204.24

The Art and Application of Large Angle Convergent Beam Electron Diffraction

Elżbieta Jezierska
Solid State Phenomena 186 16 (2012)
https://doi.org/10.4028/www.scientific.net/SSP.186.16

Nanopipes in Gallium Nitride Nanowires and Rods

Benjamin W. Jacobs, Martin A. Crimp, Kaylee McElroy and Virginia M. Ayres
Nano Letters 8 (12) 4353 (2008)
https://doi.org/10.1021/nl802198h

Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

J.L. Weyher
Superlattices and Microstructures 40 (4-6) 279 (2006)
https://doi.org/10.1016/j.spmi.2006.06.011