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Cited article:

Effect of the p⁺-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers

M. Pommiès, M. Avella, G. Patriarche, M. Bettiati, G. Hallais, J. Jiménez

Eur. Phys. J. Appl. Phys., 27 1-3 (2004) 465-468

Published online: 2004-07-15

DOI: https://doi.org/10.1051/epjap:2004052

This article has been cited by the following article(s):

Screening of high-power diode laser bars by optical scanning

Tran Quoc Tien, Axel Gerhardt, Sandy Schwirzke-Schaaf, et al.
Applied Physics Letters 87 (21) 211110 (2005)
https://doi.org/10.1063/1.2135885

Articles citing this article

Cited article:

Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers

This article has been cited by the following article(s):

Screening of high-power diode laser bars by optical scanning

Effect of the p⁺-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers