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Cited article:

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MBE Growth of Highly Relaxed Si 0.45 Ge 0.55 Films with Very Low Misfit Dislocation Density on Si (001) Substrates

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https://doi.org/10.1088/0256-307X/23/1/064

Influence of enhanced temperature and pressure on structural transformations in pre‐annealed Cz‐Si

Jerzy Ciosek, Andrzej Misiuk, Barbara Surma and Vladimir V. Shchennikov
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