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Cited article:

Influence of temperature on the electronic properties of Si δ-doped GaAs structures

E. Ozturk, Y. Ergun, H. Sari, I. Sokmen

Eur. Phys. J. AP, 21 2 (2003) 97-101

Published online: 2002-11-29

DOI: https://doi.org/10.1051/epjap:2002111

This article has been cited by the following article(s):

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Physica B: Condensed Matter 415 72 (2013)
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Self-consistent calculation of transport properties in Si GaAs quantum wells as a function of the temperature

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Intersubband optical absorption of double Si δ-doped GaAs layers

E Ozturk and I Sokmen
Superlattices and Microstructures 35 (1-2) 95 (2004)
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Intersubband optical absorption in Siδ-doped GaAs for the donor distribution and thickness as dependent on the applied electric field

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The electric field effects on intersubband optical absorption of Si δ-doped GaAs layer

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Solid State Communications 126 (11) 605 (2003)
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Influence of an applied electric field on the electronic properties of Siδ-doped GaAs

E. Ozturk, Y. Ergun, H. Sari and I. Sokmen
The European Physical Journal Applied Physics 24 (3) 189 (2003)
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