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Cited article:

The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions

M. Ketata, K. Ketata, S. Koumetz, J. Marcon, C. Dubois

Eur. Phys. J. AP, 8 1 (1999) 19-24

Published online: 1999-10-15

DOI: https://doi.org/10.1051/epjap:1999224

This article has been cited by the following article(s):

A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism

J. Marcon, S. Koumetz, K. Ketata, M. Ketata and J. G. Caputo
The European Physical Journal Applied Physics 8 (1) 7 (1999)
https://doi.org/10.1051/epjap:1999223