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Cited article:

Efficiency Enhanced Colloidal Mn‐Doped Type II Core/Shell ZnSe/CdS Quantum Dot Sensitized Hybrid Solar Cells

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Journal of Nanomaterials 2015 (1) (2015)
https://doi.org/10.1155/2015/921903

Growth of Strain-Relaxed Si1-yCy Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy

Hanae Ishihara, Masahiko Murano, Akira Yamada and Makoto Konagai
Japanese Journal of Applied Physics 46 (4R) 1600 (2007)
https://doi.org/10.1143/JJAP.46.1600

Fabrication and characterization of strained Si1−C n-MOSFETs grown by Hot Wire Cell method

Hanae Ishihara, Tatsuro Watahiki, Akira Yamada and Makoto Konagai
Thin Solid Films 508 (1-2) 329 (2006)
https://doi.org/10.1016/j.tsf.2005.07.337

Alloy and phonon scattering limited mobility in strain‐free ternary Si1–x–yGexCy

Bratati Mukhopadhyay and P. K. Basu
physica status solidi (b) 241 (15) 3600 (2004)
https://doi.org/10.1002/pssb.200402108

Reduced pressure chemical vapor deposition of Si/Si1−yCy heterostructures forn-type metal–oxide–semiconductor transistors

J. M. Hartmann, T. Ernst, V. Loup, et al.
Journal of Applied Physics 92 (5) 2368 (2002)
https://doi.org/10.1063/1.1497451

Semiclassical and wave mechanical modeling of charge control and direct tunneling leakage in MOS and H-MOS devices with ultra-thin oxides

E. Cassan, P. Dollfus, S. Galdin and P. Hesto
IEEE Transactions on Electron Devices 48 (4) 715 (2001)
https://doi.org/10.1109/16.915702

Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures

P. Dollfus, S. Galdin, P. Hesto and H. J. Osten
Journal of Materials Science: Materials in Electronics 12 (4-6) 245 (2001)
https://doi.org/10.1023/A:1011211420560

Monte Carlo study of sub-0.1 μm Si/sub 0.97/C/sub 0.03//Si MODFET: electron transport and device performance

P. Dollfus, S. Galdin, P. Hesto and J.E. Velazquez
IEEE Transactions on Electron Devices 47 (6) 1247 (2000)
https://doi.org/10.1109/16.842969

On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrödinger–Poisson solver

Eric Cassan
Journal of Applied Physics 87 (11) 7931 (2000)
https://doi.org/10.1063/1.373477