Eur. Phys. J. AP
Volume 7, Number 1, July 1999
|Page(s)||73 - 77|
|Published online||15 July 1999|
Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−yCy (y ≤ 0.03)
Institut d'Électronique Fondamentale (URA 22 du CNRS),
Université Paris-Sud, Bâtiment 220, 91405 Orsay Cedex, France
Corresponding author: firstname.lastname@example.org
Accepted: 15 April 1999
Published online: 15 July 1999
Electron transport properties in tensile strained Si-based materials are theoretically analyzed using Monte-Carlo calculation. We focus our interest on in-plane transport in Si and Si1−yCy (y ≤ 0.03), grown respectively on 〈001〉 Si1−xGex pseudo-substrate and Si substrate, with a view to Field-Effect-Transistor application. In comparison with unstrained Si, the tensile strain effect is shown to be very attractive in Si: drift mobilities greater than 3000 cm2/Vs are obtained at 300 K for a Ge fraction mole of 0.2 in the pseudo-substrate. In the Si1−yCy/Si system, that does not need any pseudo-substrate, the beneficial strain effect on transport is counterbalanced by the alloy scattering whose influence on mobility is studied. If the alloy potential is greater than about 1 eV, the advantage of strain-induced reduction of effective mass is lost in terms of stationary transport performance at 300 K.
PACS: 72.10.-d – Theory of electronic transport; scattering mechanism / 72.10.Di – Scattering by phonons, magnons, and other monlocalized excitations / 72.20.Fr – Low-field transport and mobility; piezoresistance
© EDP Sciences, 1999
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.