Eur. Phys. J. AP
Volume 7, Number 1, July 1999
|Page(s)||73 - 77|
|Published online||15 July 1999|
Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−yCy (y ≤ 0.03)
Institut d'Électronique Fondamentale (URA 22 du CNRS),
Université Paris-Sud, Bâtiment 220, 91405 Orsay Cedex, France
Corresponding author: email@example.com
Accepted: 15 April 1999
Published online: 15 July 1999
Electron transport properties in tensile strained Si-based materials are theoretically analyzed using Monte-Carlo calculation. We focus our interest on in-plane transport in Si and Si1−yCy (y ≤ 0.03), grown respectively on 〈001〉 Si1−xGex pseudo-substrate and Si substrate, with a view to Field-Effect-Transistor application. In comparison with unstrained Si, the tensile strain effect is shown to be very attractive in Si: drift mobilities greater than 3000 cm2/Vs are obtained at 300 K for a Ge fraction mole of 0.2 in the pseudo-substrate. In the Si1−yCy/Si system, that does not need any pseudo-substrate, the beneficial strain effect on transport is counterbalanced by the alloy scattering whose influence on mobility is studied. If the alloy potential is greater than about 1 eV, the advantage of strain-induced reduction of effective mass is lost in terms of stationary transport performance at 300 K.
PACS: 72.10.-d – Theory of electronic transport; scattering mechanism / 72.10.Di – Scattering by phonons, magnons, and other monlocalized excitations / 72.20.Fr – Low-field transport and mobility; piezoresistance
© EDP Sciences, 1999
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