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Cited article:

Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor

R. Bourguiga, H. Sik, A. Scavennec

Eur. Phys. J. AP, 6 3 (1999) 299-301

Published online: 1999-06-15

DOI: https://doi.org/10.1051/epjap:1999187

This article has been cited by the following article(s):

Comparative study of InGaP/GaAs heterojunction bipolar transistors (HBTs) with different base surface treatments

Tzu-Pin Chen, Chi-Jhung Lee, Li-Yang Chen, et al.
Superlattices and Microstructures 46 (4) 715 (2009)
https://doi.org/10.1016/j.spmi.2009.08.012