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Cited article:

PAMBE Growth of GaN Nanowires on Metallic ZrN Buffers─A Critical Impact of ZrN Layer Thickness on the Growth Temperature

K. Olszewski, Z. R. Zytkiewicz, A. Wierzbicka, M. Guziewicz and M. Sobanska
Crystal Growth & Design 25 (14) 5347 (2025)
https://doi.org/10.1021/acs.cgd.5c00514

Radiation‐Corrected Harman Method for Characterization of Thermoelectric Materials

Xianyu Ao, Johannes de Boor and Volker Schmidt
Advanced Energy Materials 1 (6) 1007 (2011)
https://doi.org/10.1002/aenm.201100272

Complete Characterization of Thermoelectric Materials by a Combined van der Pauw Approach and the Effect of Radiation Losses

Johannes de Boor and Volker Schmidt
MRS Proceedings 1314 (2011)
https://doi.org/10.1557/opl.2011.514

Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy

D. Vignaud, M. Zaknoune and F. Mollot
Journal of Crystal Growth 291 (1) 107 (2006)
https://doi.org/10.1016/j.jcrysgro.2006.02.038