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Cited article:

The residual electrically active damage in low energy boron implanted silicon: rapid thermal annealing and implant mass effects

L. Kaabi, J. Ben Brahim, B. Remaki, C. Gontrand, H. El Omari, J.-C. Bureau, Z. Sassi, B. Balland

Eur. Phys. J. AP, 3 1 (1998) 49-52

Published online: 1998-07-15

DOI: https://doi.org/10.1051/epjap:1998203

PDF (196.1 KB)

This article has been cited by the following article(s):

Comparison of oxide leakage currents induced by ion implantation and high field electric stress

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Solid-State Electronics 45 (8) 1355 (2001)
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Comparison of oxide leakage currents induced by ion implantation and high field electric stress

D Goguenheim, A Bravaix, J.M Moragues, P Lambert and P Boivin
Microelectronics Reliability 40 (4-5) 751 (2000)
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L. Kaabi, F. Abdelmalek, Z. Sassi, J.-C. Bureau, W. Belhadj and B. Ballard
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https://doi.org/10.1109/MMB.2000.893806