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Cited article:

Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar Transistor

R. Bourguiga, H. Sik, A. Scavennec

Eur. Phys. J. AP, 4 1 (1998) 27-29

Published online: 1998-10-15

DOI: https://doi.org/10.1051/epjap:1998104

PDF (275.5 KB)

This article has been cited by the following article(s):

Effect of leakage current induced by B+H+implantation in the isolation process for self passivated GaAlAs/GaInP/GaAs HBT

R. Bourguiga, H. Sik, A. Scavennec and H. Bouchriha
The European Physical Journal Applied Physics 19 (3) 195 (2002)
https://doi.org/10.1051/epjap:2002066

Surface passivation of composition graded base in GaAlAs/GaInP/GaAs heterojunction bipolar transistor

R. Bourguiga, H. Sik and A. Scavennec
The European Physical Journal Applied Physics 6 (3) 299 (1999)
https://doi.org/10.1051/epjap:1999187