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Cited article:

Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET

Sami Ghedira, Cyril Buttay, Hervé Morel, Kamel Besbes

Eur. Phys. J. Appl. Phys., 66 2 (2014) 20103

Published online: 2014-06-05

DOI: https://doi.org/10.1051/epjap/2014130533

This article has been cited by the following article(s):

Temperature Dependent Analytical Model for the Threshold Voltage of the SiC VJFET with a Lateral Asymmetric Channel

Sami Ghedira, Abdelaali Fargi and Kamel Besbes
Electronics 10 (12) 1494 (2021)
https://doi.org/10.3390/electronics10121494

Sami Ghedira, Hervé Morel and Kamel Besbes
1 (2018)
https://doi.org/10.1145/3234698.3234746

On the Optimum Determination and Use of SiC VJFET Threshold Voltage

Maria Kayambaki, Nikolaos Makris, Antonis Stavrinidis, George Konstantinidis and Konstantinos Zekentes
Materials Science Forum 924 657 (2018)
https://doi.org/10.4028/www.scientific.net/MSF.924.657

A Continuous Semi-Empirical VJFET Capacitance Model from Sub to above Threshold Regime

Nikolaos Makris, Maria Kayambaki, Antonis Stavrinidis, George Konstantinidis and Konstantinos Zekentes
Materials Science Forum 924 649 (2018)
https://doi.org/10.4028/www.scientific.net/MSF.924.649