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Cited article:

Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe₂ Schottky diodes

A. Bobby, P.S. Gupta, B.K. Antony

Eur. Phys. J. Appl. Phys., 60 1 (2012) 10104

Published online: 2012-10-31

DOI: https://doi.org/10.1051/epjap/2012120343

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Magnetic, structural and transport properties across the Heusler alloy (Co2FeAl)/n-Si interfacial structure

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Electronic and Magneto-Transport Across the Heusler Alloy (Co2FeAl)/p-Si Interfacial Structure

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Reverse leakage mechanisms of liquid metal contacts onto II–VI group semiconductor (Ga/p-WSe2)

Achamma Bobby, Partha Sarathi Gupta and Bobby Kachappilly Antony
The European Physical Journal Applied Physics 62 (2) 20104 (2013)
https://doi.org/10.1051/epjap/2013130018