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Cited article:

Performance Enhancement of T-gated GaN HEMTs Using Polarization-Graded AlGaN Back Barrier for High-Frequency Applications

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Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier

K. Husna Hamza, D. Nirmal, A.S. Augustine Fletcher, J. Ajayan and Ramkumar Natarajan
Materials Science and Engineering: B 284 115863 (2022)
https://doi.org/10.1016/j.mseb.2022.115863

The lattice-matched AlInN/GaN high electron mobility transistor with BGaN buffer

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Solid State Communications 337 114449 (2021)
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Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters

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Applied Physics Reviews 7 (4) (2020)
https://doi.org/10.1063/5.0025371

Enhancement of electrons confinement in AlGaN/AlN/GaN heterostructure using BGaN buffer with a small B-content

Tiecheng Han, Hongdong Zhao and Xiaocan Peng
Superlattices and Microstructures 126 57 (2019)
https://doi.org/10.1016/j.spmi.2018.12.018

The influence of Al composition in AlGaN back barrier layer on leakage current and dynamic R ON characteristics of AlGaN/GaN HEMTs

Liang He, Liuan Li, Yue Zheng, et al.
physica status solidi (a) 214 (8) 1600824 (2017)
https://doi.org/10.1002/pssa.201600824