Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

A study of BGaN back-barriers for AlGaN/GaN HEMTs

Jeramy R. Dickerson, Vinod Ravindran, Tarik Moudakir, Simon Gautier, Paul L. Voss, Abdallah Ougazzaden

Eur. Phys. J. Appl. Phys., 60 3 (2012) 30101

Published online: 2012-11-26

DOI: https://doi.org/10.1051/epjap/2012120265

This article has been cited by the following article(s):

Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier

K. Husna Hamza, D. Nirmal, A.S. Augustine Fletcher, J. Ajayan and Ramkumar Natarajan
Materials Science and Engineering: B 284 115863 (2022)
https://doi.org/10.1016/j.mseb.2022.115863

Nisarga Chand, Sanjit Kumar Swain, Sudhansu Mohan Biswal, Angsuman Sarkar and Sarosij Adak
616 (2021)
https://doi.org/10.1109/DevIC50843.2021.9455877

The lattice-matched AlInN/GaN high electron mobility transistor with BGaN buffer

Lixin Geng, Hongdong Zhao, Tiecheng Han and Xinglin Ren
Solid State Communications 337 114449 (2021)
https://doi.org/10.1016/j.ssc.2021.114449

Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters

Robert Kudrawiec and Detlef Hommel
Applied Physics Reviews 7 (4) (2020)
https://doi.org/10.1063/5.0025371

Sarosij Adak, Nisarga Chand, Sanjit Kumar Swain and Angsuman Sarkar
156 (2019)
https://doi.org/10.1109/DEVIC.2019.8783383

Enhancement of electrons confinement in AlGaN/AlN/GaN heterostructure using BGaN buffer with a small B-content

Tiecheng Han, Hongdong Zhao and Xiaocan Peng
Superlattices and Microstructures 126 57 (2019)
https://doi.org/10.1016/j.spmi.2018.12.018

The influence of Al composition in AlGaN back barrier layer on leakage current and dynamic R ON characteristics of AlGaN/GaN HEMTs

Liang He, Liuan Li, Yue Zheng, et al.
physica status solidi (a) 214 (8) 1600824 (2017)
https://doi.org/10.1002/pssa.201600824

The surface morphology research of the BGaN thin films deposited by thermionic vacuum arc

Soner Özen, Suat Pat, Volkan Şenay and Şadan Korkmaz
Vacuum 135 50 (2017)
https://doi.org/10.1016/j.vacuum.2016.10.033