Articles citing this article

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Cited article:

Raman study on dislocation in high Al content Al_xGa_1−xN

X. Pan, X.L. Wang, H.L. Xiao, C.M. Wang, C. Feng, L.J. Jiang, H. Yin, H. Chen

Eur. Phys. J. Appl. Phys., 58 1 (2012) 10102

Published online: 2012-03-29

DOI: https://doi.org/10.1051/epjap/2012120004

This article has been cited by the following article(s):

Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism

Fen Guo, Quan Wang, Hongling Xiao, et al.
Semiconductor Science and Technology 35 (9) 095024 (2020)
https://doi.org/10.1088/1361-6641/ab9d33

Excitation of gallium one-charged ion in e-Ga collisions

Yu M Smirnov
Journal of Physics B: Atomic, Molecular and Optical Physics 48 (16) 165204 (2015)
https://doi.org/10.1088/0953-4075/48/16/165204