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Cited article:

Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

R. Boujamaa, E. Martinez, F. Pierre, et al.
Applied Surface Science 335 71 (2015)
https://doi.org/10.1016/j.apsusc.2015.02.022

Backside medium energy ion scattering study of the lanthanum diffusion in advanced gate stacks for the 32 nm node

F. Pierre, D. Jalabert, R. Boujamaa, M. Py, J.P. Barnes and F. Bertin
Microelectronic Engineering 111 29 (2013)
https://doi.org/10.1016/j.mee.2013.05.004