Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate
Eur. Phys. J. Appl. Phys., 51 1 (2010) 10304
Published online: 2010-06-24
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Small signal and noise analysis of T-gate HEMT with polarization doped buffer for LNAs
Megha Sharma, Bhavya Kumar and Rishu ChaujarMicro and Nanostructures 180 207593 (2023)
https://doi.org/10.1016/j.micrna.2023.207593
Transport characteristics of AlGaN/GaN structures for amplification of terahertz radiations
Harpreet Kaur, Rajesh Sharma, T. Laurent, et al.Applied Physics A 128 (2) (2022)
https://doi.org/10.1007/s00339-022-05284-8
Thermal response and correlation between mobility and kink effect in GaN HEMTs
Mohammad A. Alim, S. Afrin, A.A. Rezazadeh and C. GaquiereMicroelectronic Engineering 219 111148 (2020)
https://doi.org/10.1016/j.mee.2019.111148
Conductance Deep-Level Transient Spectroscopy and Current Transport Mechanisms in Au|Pt|n-GaN Schottky Barrier Diodes
M. GassoumiPhysics of the Solid State 62 (4) 636 (2020)
https://doi.org/10.1134/S1063783420040095
Hole trap, leakage current and barrier inhomogeneity in (Pt/Au) Al0.2Ga0.8N/GaN heterostructures
Salah Saadaoui, Olfa Fathallah, Fethi Albouchi, et al.Journal of Physics and Chemistry of Solids 132 157 (2019)
https://doi.org/10.1016/j.jpcs.2019.02.027
Analysis of Thermal Effects on Electrical Characterization of AlGaN/GaN/Si FAT-HEMTs
Fikria Jabli, Malek Gassoumi, Nawfel Ben Hamadi, et al.Silicon 9 (4) 629 (2017)
https://doi.org/10.1007/s12633-015-9337-0
New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al2O3/Ga2O3Stacks
Ogyun Seok, Woojin Ahn, Min-Koo Han and Min-Woo HaJapanese Journal of Applied Physics 51 (10R) 101001 (2012)
https://doi.org/10.7567/JJAP.51.101001
Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors
Salah Saadaoui, Mohamed Mongi Ben Salem, Malek Gassoumi, Hassen Maaref and Christophe GaquièreJournal of Applied Physics 111 (7) (2012)
https://doi.org/10.1063/1.3702458
Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode
Salah Saadaoui, Mohamed Mongi Ben Salem, Malek Gassoumi, Hassen Maaref and Christophe GaquièreJournal of Applied Physics 110 (1) (2011)
https://doi.org/10.1063/1.3600229