Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Photoluminescence study of nitrogen effects on confined states in GaAs_1−xN_xGaAs quantum wells

I. Dhifallah, S. Aloulou, A. Bardaoui, J. C. Harmand, R. Chtourou

Eur. Phys. J. Appl. Phys., 47 3 (2009) 30302

Published online: 2009-06-12

DOI: https://doi.org/10.1051/epjap/2009107

This article has been cited by the following article(s):

Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs

Mahmoud Daoudi, Najla Khalifa, Ines Dhifallah and Abdelkarim Ouerghi
The European Physical Journal Applied Physics 66 (1) 10102 (2014)
https://doi.org/10.1051/epjap/2014130343

Carbon n-δ-doping effects on electronic and optical properties in GaAs/AlGaAs HEMTs

M. Daoudi, H. Kaouach, I. Dhifallah, A. Ouerghi and R. Chtourou
Superlattices and Microstructures 72 50 (2014)
https://doi.org/10.1016/j.spmi.2014.04.004

Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

M. Daoudi, I. Dhifallah, A. Ouerghi and R. Chtourou
Superlattices and Microstructures 51 (4) 497 (2012)
https://doi.org/10.1016/j.spmi.2012.01.013

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

I. Dhifallah, M. Daoudi, A. Bardaoui, et al.
Journal of Luminescence 131 (5) 1007 (2011)
https://doi.org/10.1016/j.jlumin.2011.01.012

Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures

I. Dhifallah, M. Daoudi, A. Ouerghli, M. Oueslati and R. Chtourou
Superlattices and Microstructures 49 (5) 519 (2011)
https://doi.org/10.1016/j.spmi.2011.03.001

Photoluminescence studies of 2DEG confinement in InAs ultrathin layer introduced in GaAs/AlGaAs structure

I. Dhifallah, M. Daoudi, A. Bardaoui, et al.
Physica E: Low-dimensional Systems and Nanostructures 42 (8) 2134 (2010)
https://doi.org/10.1016/j.physe.2010.04.012