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Cited article:

Photoluminescence study of nitrogen effects on confined states in GaAs_1−xN_xGaAs quantum wells

I. Dhifallah, S. Aloulou, A. Bardaoui, J. C. Harmand, R. Chtourou

Eur. Phys. J. Appl. Phys., 47 3 (2009) 30302

Published online: 2009-06-12

DOI: https://doi.org/10.1051/epjap/2009107

This article has been cited by the following article(s):

A Combined Experimental and Density Functional Theory Study of Calcination Temperature Effects on the Properties and Photocatalytic Activity of Starch-Mediated Spinel ZnAl2O4

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Interesting effects of the piezoelectric and internal electric fields on the band gap of InAs/GaAs/AlGaAs:δ-Si HEMTs

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Carbon n-δ-doping effects on electronic and optical properties in GaAs/AlGaAs HEMTs

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Superlattices and Microstructures 72 50 (2014)
https://doi.org/10.1016/j.spmi.2014.04.004

Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

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Superlattices and Microstructures 51 (4) 497 (2012)
https://doi.org/10.1016/j.spmi.2012.01.013

Silicon doping effects on optical properties of InAs ultrathin layer embedded in GaAs/AlGaAs:δSi high electron mobility transistors structures

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Superlattices and Microstructures 49 (5) 519 (2011)
https://doi.org/10.1016/j.spmi.2011.03.001

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

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Journal of Luminescence 131 (5) 1007 (2011)
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Photoluminescence studies of 2DEG confinement in InAs ultrathin layer introduced in GaAs/AlGaAs structure

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