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Cited article:

Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties

M. Moret, S. Ruffenach, O. Briot, B. Gil

Eur. Phys. J. Appl. Phys., 45 2 (2009) 20305

Published online: 2009-01-31

DOI: https://doi.org/10.1051/epjap/2009007

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Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers

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An approach to temperature‐insensitive band gap – The InGaGdN case

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Evolution of phase separation in In-rich InGaN alloys

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Applied Physics Letters 96 (23) (2010)
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