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All issues Volume 36 / No 3 (December 2006) Eur. Phys. J. Appl. Phys., 36 3 (2006) 197-214 References
Free Access
Review
Issue
Eur. Phys. J. Appl. Phys.
Volume 36, Number 3, December 2006
Page(s) 197 - 214
Section Review Article
DOI https://doi.org/10.1051/epjap:2006158
Published online 10 January 2007
  1. The International Technology Roadmap for Semiconductors, edn. 2005 [Google Scholar]
  2. H. Iwai, IEDM Tech Digest 2004, San Francisco, CA, Dec. 2004, pp. 11–14 [Google Scholar]
  3. S. Deleonibus et al., IEEE Electr. Device L. 173 (2000) [Google Scholar]
  4. G. Bertrand et al., Silicon Nanoelectronics Workshop 2000, Honolulu, HI, June 2000, pp. 10, 11 [Google Scholar]
  5. G. Bertrand et al., Solid State Electron. 48, 505 (2004) [CrossRef] [Google Scholar]
  6. K. Romanjek et al., IEEE Electr. Device L. 25, 583 (2004) [CrossRef] [Google Scholar]
  7. S. Deleonibus et al., ESSDERC Tech. Digest 1999, Leuven, Sept. 1999, pp. 119–126 [Google Scholar]
  8. H. Iwai et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 163–166 [Google Scholar]
  9. C. Caillat et al., VLSI Tech. Symp. Tech. Digest 1999, June 1999, Kyoto, Japan, pp. 89, 90 [Google Scholar]
  10. Y. Taur et al., IBM J. Res. Dev. 39, 245 (1995) [CrossRef] [Google Scholar]
  11. K. Gopalakrishnan et al., IEDM2002 Tech. Digest, San Francisco, CA, Dec. 2002, pp. 289–291 [Google Scholar]
  12. T. Oyamatsu et al., VLSI Tech. Symp. Tech. Digest, Kyoto, Japan, June 1993, pp. 89, 90 [Google Scholar]
  13. W. Schockley, Solid State Electron. 2, 35 (1961) [Google Scholar]
  14. V. De et al., VLSI Tech. Symp. Tech. Digest 1998, Honolulu, HI, June 1998, pp. 95, 96 [Google Scholar]
  15. W. Wong et al., IEDM Tech. Digest 1993, Washington, DC, Dec. 1993, pp. 705–708 [Google Scholar]
  16. T. Ohguro et al., IEEE T. Electr. Device L. 45, 710 (1998) [CrossRef] [Google Scholar]
  17. T. Ernst et al., VLSI Technology Symposium 2003 Tech. Digest, Kyoto, Japan, pp. 51, 52 [Google Scholar]
  18. F. Ducroquet et al., IEDM Tech. Digest 2004, San Francisco, CA, Dec. 2004, pp. 437–440 [Google Scholar]
  19. M. Carroll et al., IEDM Tech. Digest 2000, San Francisco, CA, Dec. 2000, pp. 145–148 [Google Scholar]
  20. K. Rim et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 707–710 [Google Scholar]
  21. J.M. Hartmann et al., Semicond. Sci. Tech. 19, 311 (2004) [CrossRef] [Google Scholar]
  22. E.A. Fitzgerald et al., Phys. Status Solidi A 171 (1999) [Google Scholar]
  23. S. Bedell et al., MRS Spring Meeting Proc., April 2004 [Google Scholar]
  24. F. Andrieu et al., ESSDERC 2003 Proc., Estoril, Portugal, Sept. 2003, pp. 267–270 [Google Scholar]
  25. J. Alieu et al., ESSDERC 98, Bordeaux, France, Sept. 1998, p. 144 [Google Scholar]
  26. A.-C. Lindgren et al., ESSDERC 02, Bologna, Italy, Sept. 2002, p. 175 [Google Scholar]
  27. N. Collaert et al., Silicon Nanoelectronics Workshop Digest 2002, Honolulu, HI, June 2002, pp. 15, 16 [Google Scholar]
  28. N. Collaert et al., ESSDERC 02, Bologna, Italy, Sept. 2002, p. 263 [Google Scholar]
  29. K.A. Jenkins, K. Rim, IEEE Electron. Device L. 23, (2002) [Google Scholar]
  30. G. Xia et al., IEEE T. Electron Dev. 51, (2004) [Google Scholar]
  31. H. Kawasaki et al., IEDM 2004 Tech. Digest, San Francisco, CA, Dec 2004, pp. 169–172 [Google Scholar]
  32. K. Rim et al., VLSI Tech. Symp Digest 2002, Honolulu, HI, June 2002, pp. 12, 13 [Google Scholar]
  33. O. Weber et al., VLSI Tech. Symp. Digest 2004, Honolulu, HI, June 2004, pp. 42, 43 [Google Scholar]
  34. F. Andrieu et al., 2006 VLSI Tech. Symp. Digest, Honolulu, HI, June 2006, pp. 168-169 and F. Andrieu et al., IEEE Intern. SOI Conf. Digest, Honolulu, HI, Oct. 2005, p. 223 [Google Scholar]
  35. T. Tezukae et al., 2002 VLSl Tech. Symp. Digest, Honolulu, HI, June 2002, pp. 96, 97 [Google Scholar]
  36. F. Boeuf et al., IEDM 2004 Digest, San Francisco, CA, Dec 2004, pp. 425–428 [Google Scholar]
  37. F. Andrieu et al., 2005 VLSI Tech. Symp. Digest, Kyoto, Japan, June 2005, pp. 176, 177 [Google Scholar]
  38. T. Mizuno et al., 2003 VLSI Tech. Symp. Digest, Kyoto, Japan, June 2003, pp. 97, 98 [Google Scholar]
  39. M. Yang et al., 2004 VLSI Tech. Symp. Honolulu, HI, June 2004, pp. 160, 161 [Google Scholar]
  40. M.L. Lee, E.A. Fitzgerald, IEDM 2003 Dig, Washington, DC, Dec. 2003, pp. 131–429 [Google Scholar]
  41. A. Chatterjee et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 777–780 [Google Scholar]
  42. A. Yagashita et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 785–788 [Google Scholar]
  43. B. Guillaumot et al., IEDM 2002 Tech. Digest, San Francisco, CA, Dec 2002, pp. 335–338 [Google Scholar]
  44. B. Tavel et al., IEDM 2001 Digest, Washington, DC, Dec 2001, pp. 825–828 [Google Scholar]
  45. J. Kedzierski et al., IEDM 2002 Digest, San Francisco, CA, Dec. 2002, pp. 247–250 [Google Scholar]
  46. W.P. Maszara et al., IEDM 2002 Digest, San Francisco, CA, Dec. 2002, pp. 367–370 [Google Scholar]
  47. C. Hobbs et al., VLSI Tech. Symp. 2003 Tech. Digest, Kyoto, Japan, pp. 9, 10 [Google Scholar]
  48. D. Souil et al., 3rd ULIS Workshop 2002, Munich, FRG, March 2002, pp. 139–142 [Google Scholar]
  49. G. Timp et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 615–618 [Google Scholar]
  50. S. Takagi et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 619–622 [Google Scholar]
  51. J. Lee et al., IEDM Tech. Digest 1999, Washington, DC, Dec. 1999, pp. 133–136 [Google Scholar]
  52. H. Iwai et al., IEDM Tech. Digest 2002, San Francisco, CA, Dec 2002, pp. 625–627 [Google Scholar]
  53. O. Weber et al., IEDM 2004, San Francisco, CA, Dec. 2004, pp. 867–670 [Google Scholar]
  54. J.L. Pelloie, ISSCC Tech. Digest 1999, San Francisco, CA, Feb. 1999, p. 428 [Google Scholar]
  55. L. Leobandung et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 403–407 [Google Scholar]
  56. J. Lolivier et al., ECS Spring 2003 Proc., Paris, France, April 2003, pp. 379 [Google Scholar]
  57. B. Doris et al., IEDM 2002 Tech. Digest, San Francisco, CA, Dec 2002, pp. 267–270 [Google Scholar]
  58. J. Lolivier et al., SOI Conference 2004, Charleston, SC, October 2004, pp. 17, 18 [Google Scholar]
  59. H. Nakayama et al., IEEE SOI Conf. 2000 Proc., Wakefield, Mass, Oct 2000, pp. 128, 129 [Google Scholar]
  60. K. Oshima et al., SOI Conference 2002 Tech. Digest, Oct 2002, pp. 95, 96 [Google Scholar]
  61. H.S.P. Wong et al., IEDM Tech. Digest 1997, Washington, DC, Dec. 1997, pp. 427–430 [Google Scholar]
  62. F. Allibert et al., ESSDERC 2001, Nurnberg, FRG, Sept 2001, pp. 267–270 [Google Scholar]
  63. B. Yu et al., IEDM 2002 Tech. Digest, San Francisco, CA, Dec 2002, pp. 251–253 [Google Scholar]
  64. J. Kedzierski et al., IEDM 2002 Tech. Digest, San Francisco, CA, Dec 2002, pp. 247–250 [Google Scholar]
  65. F.L. Yang et al., IEDM 2002 Tech. Digest, San Francisco, CA, Dec 2002, pp. 255–258 [Google Scholar]
  66. E.C. Jones et al., Dev. Res. Conf. 2001 Digest, June 2001 [Google Scholar]
  67. T. Sekigawa, Solid State Electron 27, 827 (1984) [CrossRef] [Google Scholar]
  68. D. Hisamoto, in Tech. Digest of IEDM (1998), pp. 833–836 [Google Scholar]
  69. F. Balestra et al., IEEE Electr. Device L. 8, 410 (1987) [CrossRef] [Google Scholar]
  70. M. Vinet et al., IEEE Electr. Device L. 26, 317 (2005) [CrossRef] [Google Scholar]
  71. M. Vinet et al., ECS Spring meeting 2005 Proc., Québec, CA, May 2005, pp. 285–296 [Google Scholar]
  72. T. Poiroux et al., ULIS2005 Proc, Bologna, Italy, April 2005, pp. 71–74 [Google Scholar]
  73. T. Poiroux et al., Microelectron. Eng. 80, 378 (2005) [CrossRef] [Google Scholar]
  74. M. Vinet et al., Int. Conf. SSDM 2004 Proc, Tokyo, Japan, Sept 2004, pp. 768, 769 [Google Scholar]
  75. J.P. Colinge et al., IEDM 1990 Digest, San Francisco, CA, Dec 1990, pp. 595–598 [Google Scholar]
  76. S. Harrison et al., IEDM 2003 Digest, Washington, DC, Dec 2003, pp. 449–452 [Google Scholar]
  77. K.W. Guarini et al., IEDM 2001 Digest, Washington, DC, Dec 2001, pp. 425–428 [Google Scholar]
  78. J.H. Lee et al., IEDM 1999 Digest, Washington, DC, Dec 1999, pp.71–74 [Google Scholar]
  79. J. Lolivier et al., ESSDERC 2004 Proc., Leuven, Belgium, Sept 2004, pp. 177–180 [Google Scholar]
  80. X. Huang et al., IEDM 1999 Digest, Washington, DC, Dec. 1999, pp. 67–70 [Google Scholar]
  81. B. Doyle et al., VLSI Tech. Symp. 2003 Digest, Kyoto, Japan, June 2003, pp. 133, 134 [Google Scholar]
  82. F.L. Yang et al., IEDM 2002 Digest, San Francisco, CA, Dec 2002, pp. 255–258 [Google Scholar]
  83. J.T. Park et al., IEEE Electr. Device L. 22, 405 (2001) [CrossRef] [Google Scholar]
  84. F.L. Yang et al., VLSI Tech. Symp. 2004 Digest, Honolulu, HI, June 2004, pp. 196, 197 [Google Scholar]
  85. Y.K. Choi et al., Solid State Electron 46, 1595 (2002) [CrossRef] [Google Scholar]
  86. C. Jahan et al., IEEE VLSI Tech. Symp. 2005, Kyoto, Japan, June, 2005, pp. 112, 113 [Google Scholar]
  87. J.P. Colinge, Solid State Electron 48, 897 (2004) [CrossRef] [Google Scholar]
  88. J.G. Fossum et al., IEEE T. Electron Dev. 49, 808 (2002) [CrossRef] [Google Scholar]
  89. H.S.P. Wong et al., IEDM 1998 Digest, San Francisco, CA, Dec 1998, pp. 407–410 [Google Scholar]
  90. T. Ernst et al., in IEEE T. Electron Dev. 50, 830 (2003) [Google Scholar]
  91. F. Gamiz et al., J. Appl. Phys. 94, 5732 (2003) [CrossRef] [Google Scholar]
  92. K. Suzuki et al., IEEE T. Electron Dev. 40, 2326 (1993) [CrossRef] [Google Scholar]
  93. J.M. Ha et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 639–642 [Google Scholar]
  94. K. Goto et al., IEDM Tech. Digest 1997, Washington, DC, Dec. 1997, pp. 471–474 [Google Scholar]
  95. M. Takase et al., IEDM Tech. Digest 1997, Washington, DC, Dec. 1997, pp. 475–478 [Google Scholar]
  96. Y. Sasaki et al., VLSI Techn. Symp. 2004 Tech. Digest, Honolulu, HI, June 2004, pp. 180, 181 [Google Scholar]
  97. T. Noguchi et al., Proc. Mat. Res. Soc. 146, 35 (1985) [Google Scholar]
  98. C. Laviron et al., 2nd IWJT, IEEE-Cat. No. 01EX541C, 2001, Tokyo, Japan, Nov. 2001, pp. 91–94. [Google Scholar]
  99. T. Ohguro, ECS Symp on ULSI 1997, Montreal, CA, Oct. 1997, p. 275 [Google Scholar]
  100. R. Nuryadi et al., J. Vac. Sci. Tech. B 20, 167 (2002) [CrossRef] [Google Scholar]
  101. E. Dubois, G. Larrieu, Solid State Electron 997 (2002) [Google Scholar]
  102. B.Y. Tsui, C.P. Lin, IEEE Electron Device L. 430 (2004) [Google Scholar]
  103. G. Niu et al., IEEE T. Electron Dev. 46, 1912 (1999) [CrossRef] [Google Scholar]
  104. K. Chen et al., Solid State Electron 39, 1515 (1996) [CrossRef] [Google Scholar]
  105. S. Datta et al., Superlattice. Microst. 23, 771 (1998) [CrossRef] [Google Scholar]
  106. F. Assad et al., IEEE T. 47, 232 (2000) [Google Scholar]
  107. F. Assad et al., IEDM Tech. Digest, Washington, DC, Dec. 1999, pp. 5547–5550 [Google Scholar]
  108. A. Rinetour et al., IEDM Tech. Digest, Washington, DC, Dec. 2003, pp. 433–436 [Google Scholar]
  109. Chi On Chui et al., IEDM Tech. Digest, San Francisco, CA, Dec. 2002, pp. 437–440 [Google Scholar]
  110. Nishitami-Gamoet al., Diam. Relat. Mater. 9, 941 (2000) [CrossRef] [Google Scholar]
  111. Lagrangeet al., Carbon 37, 807 (1999) [CrossRef] [Google Scholar]
  112. S. Deleonibus et al., Int. J. High Speed Electron. Syst. 16, 193 (2006) [CrossRef] [Google Scholar]
  113. L. Clavelier et al., 2005 Silicon Nanolectronics Workshop, Kyoto, Japan, June 2005, pp. 18, 19 [Google Scholar]
  114. C. On Chui et al., IEDM 2002, pp. 437–440 [Google Scholar]
  115. A. Ritenour et al., IEDM 2003, pp. 433–436 [Google Scholar]
  116. S. Zhu et al., IEEE Electron Device L. 26, 81 (2005) [CrossRef] [Google Scholar]
  117. D.S. Yu et al., IEEE Electron Device L. 25, 138 (2004) [CrossRef] [Google Scholar]
  118. Y. Ono et al., IEDM 2001 Tech. Digest, Washington, DC, Dec 2001, pp. 367–370 [Google Scholar]
  119. S. Tiwari et al., Appl. Phys. Lett. 68, 1377 (1996) [CrossRef] [Google Scholar]
  120. K. Yano, IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 107–110 [Google Scholar]
  121. A. Fernandes et al., IEDM 2001 Tech. Digest, Washington, DC, Dec 2001, pp. 155–158 [Google Scholar]
  122. B. de Salvo et al., IEDM Tech. Digest 2003, Washington, DC, Dec. 2003, pp. 597–600 [Google Scholar]
  123. G. Molas et al., WODIM 2002 Proc., Grenoble, France, Nov. 2002, pp. 175–178 [Google Scholar]
  124. M. Sanquer et al., SNW 2003, Kyoto, Japan, pp. 70–71 [Google Scholar]
  125. M. Specht et al., IEDM Tech. Digest 1999, Washington, DC, Dec. 1999, pp. 383–341 [Google Scholar]
  126. G. Molas et al., IEDM Tech. Digest 2004, San Francisco, CA, Dec. 2004, pp. 877–880 [Google Scholar]
  127. L. Perniola et al., IEDM Tech. Digest 2005,Washington, DC, Dec. 2005, pp. 877–880 [Google Scholar]

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