| Issue |
Eur. Phys. J. Appl. Phys.
Volume 87, Number 3, September 2019
|
|
|---|---|---|
| Article Number | 30101 | |
| Number of page(s) | 4 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2019190037 | |
| Published online | 08 November 2019 | |
https://doi.org/10.1051/epjap/2019190037
Regular Article
Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell
1
Faculty of Science and Arts El-Mozneb, Qassim University, El-Mozneb 51931, Saudi Arabia
2
High Institute of Engineering and Technology, Buhaira, Egypt
* e-mail: univ.physics@yahoo.com
Received:
16
February
2019
Received in final form:
14
June
2019
Accepted:
22
July
2019
Published online: 8 November 2019
Semiconductor materials cadmium sulfide (CdS) and cadmium telluride (CdTe) are employed in the fabrication of thin film solar cells of relatively excessive power conversion efficiency and low producing price. Simulations of thin film CdS/CdTe solar cell were carried out using SCAPS-1D. The influence of temperature field on the variation of CdTe solar cell parameters such as current–voltage, capacitance–voltage characteristics and the external quantum efficiency was investigated theoretically. For use temperatures, one obtains the external quantum efficiency has the same profiles. However, the effect of the temperature on the Mott-Schottky curves is slightly noted by variations on the characteristics. This conclusion can be used by solar cell manufacturers to improve the solar cell parameters with the biggest possible gain in device performance.
© EDP Sciences, 2019
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