Eur. Phys. J. Appl. Phys.
Volume 75, Number 3, September 2016
|Number of page(s)||10|
|Published online||02 August 2016|
Potentiostatic controlled nucleation and growth modes of electrodeposited cobalt thin films on n-Si(1 1 1)
Université de Haute Alsace (UHA), Institut de Science des Matériaux de Mulhouse (IS2M), UMR 7361 du CNRS, 3b rue Alfred Werner, 68092 Mulhouse, France
2 Université d’Oran 1 Ahmed Benbella, Laboratoire de Physique des Couches Minces et Matériauxpour l’Electronique (LPC2ME), BP 1524, El M’Naouer, 31000 Oran, Algeria
a e-mail: firstname.lastname@example.org
Revised: 6 July 2016
Accepted: 7 July 2016
Published online: 2 August 2016
The nucleation and growth of Co electrodeposits on n-Si(1 1 1) substrate have been investigated as a function of the applied potential in a large potential range using electrochemical techniques (voltammetry and chrono-amperometry) and surface imaging by atomic force microscopy (AFM). The surface preparation of the sample is crucial and we achieve a controlled n-Si(1 1 1) surface with mono-atomic steps and flat terraces. Using Scharifker-Hills models for fitting the current-time transients, we show that a transition from an instantaneous nucleation process to a progressive one occurs when the overpotential increases. A good agreement between the nucleation and growth parameters extracted from the models and the AFM data’s is observed. The growth is of the Volmer-Weber type with a roughness and a spatial extension in the substrate plane of the deposited islands that increase with thickness.
© EDP Sciences, 2016
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.