Eur. Phys. J. Appl. Phys.
Volume 72, Number 2, November 2015
|Number of page(s)||5|
|Section||Nanomaterials and Nanotechnologies|
|Published online||30 October 2015|
In situ cleavage prepared bilayer graphene device and its large magnetoresistance
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing
210093, P.R. China
2 Key Laboratory of Modern Acoustics and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P.R. China
a e-mail: email@example.com
Revised: 25 August 2015
Accepted: 7 September 2015
Published online: 30 October 2015
A Zn-based in situ cleavage method is applied to fabricate few-layer graphene devices. This approach avoids unintentional electron-beam irradiation damage, in addition to creating a series of clean graphene devices with well controlled layer numbers. As prepared bilayer graphene surprisingly achieves a magnetoresistance ratio as high as 350% at 1.9 K and 100% at room temperature. For this reason, in situ cleavage method/electron-beam lithographic could provide a more effective way to fabricate modern day carbon electronic components.
© EDP Sciences, 2015
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