| Issue |
Eur. Phys. J. Appl. Phys.
Volume 72, Number 2, November 2015
|
|
|---|---|---|
| Article Number | 20401 | |
| Number of page(s) | 5 | |
| Section | Nanomaterials and Nanotechnologies | |
| DOI | https://doi.org/10.1051/epjap/2015150318 | |
| Published online | 30 October 2015 | |
https://doi.org/10.1051/epjap/2015150318
In situ cleavage prepared bilayer graphene device and its large magnetoresistance
1
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing
210093, P.R. China
2
Key Laboratory of Modern Acoustics and Department of Materials Science and Engineering, Nanjing University, Nanjing
210093, P.R. China
a e-mail: zhaobo6011@163.com
Received:
9
June
2015
Revised:
25
August
2015
Accepted:
7
September
2015
Published online:
30
October
2015
A Zn-based in situ cleavage method is applied to fabricate few-layer graphene devices. This approach avoids unintentional electron-beam irradiation damage, in addition to creating a series of clean graphene devices with well controlled layer numbers. As prepared bilayer graphene surprisingly achieves a magnetoresistance ratio as high as 350% at 1.9 K and 100% at room temperature. For this reason, in situ cleavage method/electron-beam lithographic could provide a more effective way to fabricate modern day carbon electronic components.
© EDP Sciences, 2015
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