Issue |
Eur. Phys. J. Appl. Phys.
Volume 70, Number 3, June 2015
Electrical Engineering Symposium (SGE 2014)
|
|
---|---|---|
Article Number | 30902 | |
Number of page(s) | 6 | |
Section | Physics of Energy Transfer, Conversion and Storage | |
DOI | https://doi.org/10.1051/epjap/2015150063 | |
Published online | 24 June 2015 |
https://doi.org/10.1051/epjap/2015150063
Electrical characterization and modelization of CaCu3Ti4O12 polycrystalline ceramics*
1
Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d’Énergie), 118 route de Narbonne, 31062
Toulouse Cedex 9, France
2
CNRS, LAPLACE, 31062
Toulouse, France
3
Centre Universitaire Jean-François Champollion, Place de Verdun, 81012
Albi Cedex, France
4
Institut Carnot CIRIMAT (Centre Inter-universitaire de Recherche et d’Ingénierie des Matériaux), Université Paul Sabatier, 18 route de Narbonne, 31062
Toulouse Cedex 9, France
a e-mail: valdez@laplace.univ-tlse.fr
Received:
1
February
2015
Revised:
21
April
2015
Accepted:
21
April
2015
Published online:
24
June
2015
Since the observation almost 15 years ago of the so-called “colossal” dielectric permittivity behavior in CaCu3Ti4O12 (CCTO) ceramics, several works have been undertaken to understand its physical origin interfacial polarization being the most likelihood. In this paper, (C-V) measurements, commonly used on semiconducting materials have been used to characterize CCTO samples. Their results may be described by a head-to-tail double metal-insulating-semiconductor (MIS) structure. A comparison between experimental and numerical simulation results of such a structure shows a good agreement, whatever the frequency range. Furthermore, this model explains the non-symmetrical behavior of the electrical response of this material, a property still not taken into account by today’s commonly known models.
© EDP Sciences, 2015
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