This article has an erratum: [https://doi.org/10.1051/epjap/2017170389]
Eur. Phys. J. Appl. Phys.
Volume 70, Number 3, June 2015
|Number of page(s)||5|
|Section||Spintronics, Magnetism and Superconductivity|
|Published online||09 June 2015|
Field dependence of magnetoresistance in half-metallic manganite
Department of Applied Physics, Nanjing Tech University, Nanjing, Jiangsu
211816, P.R. China
2 Department of Physics and Astronomy, Texas A&M University, College Station, TX 77843, USA
3 National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, Jiangsu 210093, P.R. China
a e-mail: email@example.com
Revised: 27 April 2015
Accepted: 11 May 2015
Published online: 9 June 2015
Formular description of the magnetic field dependence of resistivity is of interest not only because of its theoretical importance, but also because it allows us to design magnetic-field-controlled devices. Using micromagnetic theory combined with charge carrier hopping and spin-polarized tunneling models, the magnetic field dependence of resistivity in half-metallic ferromagnet La2/3Sr1/3MnO3 has been studied systematically. It has been shown that the resistivity is linearly dependent on magnetic field in a single grain. As for the resistivity of grain boundary (GB), namely the resistivity of spin transport across the boundary, it has an exponential relationship with magnetic field in the low-field region. Finally we give the analytical magnetoresistance formulas of polycrystalline, which agree well with the experimental results.
© EDP Sciences, 2015
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