Electrical performance of chemical vapor deposition graphene on PET substrate tailored by Cu foil surface morphology

Material Characterization Team, Materials and Components R&D Lab, LG Electronics Advanced Research Institute, 38, Baumoe-ro, Seocho-gu, Seoul 137-724, South Korea

^a e-mail: wonhwa.park@lge.com

Received: 8 May 2014
Revised: 15 May 2014
Accepted: 24 July 2014
Published online: 20 August 2014

Abstract

The author reports that the spatial luminescent distribution from Cu substrate is in special sync with the Cu substrate morphology in terms of suspended formation of the deposited graphene fabricated via chemical vapor deposition. Moreover, the Raman 2D and G peak position of the graphene relatively shift to high frequency on the even Cu foil domain, showing more compressive strain than the uneven region. The author can reveal that the reducing compressive strain by virtue of the uneven Cu domains in order to minimize the interaction between graphene and Cu substrate has one of the important roles in forming suspended graphene. Current mapping in small dimension additionally shows that the current flow is mostly detected at the nano-terrace regions than the even, further substantiating the significance of the detailed underlying Cu substrate morphology. The author can also shows the correlation between the graphene strain revealed via 2D peak shift on Cu surface and the sheet resistance value of graphene on PET substrate, suggesting the degree of suspended formation of the graphene on Cu may be one of the important factors in increasing electrical performance on PET substrate.