Issue |
Eur. Phys. J. Appl. Phys.
Volume 67, Number 3, September 2014
|
|
---|---|---|
Article Number | 30201 | |
Number of page(s) | 6 | |
Section | Physics of Organic Materials and Devices | |
DOI | https://doi.org/10.1051/epjap/2014130545 | |
Published online | 20 August 2014 |
https://doi.org/10.1051/epjap/2014130545
The charge generation layer incorporating two p-doped hole transport layers for improving the performance of tandem organic light emitting diodes
Institute of Polymer Science and Engineering, School of Chemical Engineering, Hebei University of Technology, Tianjin
300130, P.R. China
a e-mail: qindashan06@aliyun.com
Received:
30
November
2013
Revised:
30
March
2014
Accepted:
18
July
2014
Published online:
20
August
2014
We report the charge generation layer (CGL) structure comprising of Li2CO3 doped bathocuproine (BCP:Li2CO3)/MoO3 doped 4,4-N,N-bis [N-1-naphthyl-N-phenyl-amino]biphenyl (NPB:MoO3)/MoO3 doped 4,4′-N,N′-dicarbazole-biphenyl (CBP:MoO3) for tandem organic light emitting diodes (TOLEDs). Compared to the TOLED using the conventional CGL structure of BCP:Li2CO3/20 nm CBP:MoO3, the one using the CGL structure of BCP:Li2CO3/5 nm NPB:MoO3/15 nm CBP:MoO3 showed increased electrical and luminous properties, mostly because the introduction of the higher-conductivity NPB:MoO3 relative to CBP:MoO3 could improve the current conduction in the CGL structure. Whereas, the performance of the CGL structure of BCP:Li2CO3/x nm NPB:MoO3/20- x nm CBP:MoO3 decreased with x increasing, mostly due to the fact that the CBP:MoO3 became depleted of mobile holes upon contacting p-doped NPB: the smaller thickness of CBP:MoO3, the worse conductivity for it. We provide some in-depth insights on designing the high-performance CGLs for TOLEDs.
© EDP Sciences, 2014
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