| Issue |
Eur. Phys. J. Appl. Phys.
Volume 66, Number 1, April 2014
|
|
|---|---|---|
| Article Number | 10401 | |
| Number of page(s) | 4 | |
| Section | Nanomaterials and Nanotechnologies | |
| DOI | https://doi.org/10.1051/epjap/2014130523 | |
| Published online | 01 April 2014 | |
https://doi.org/10.1051/epjap/2014130523
Engineering of Bi2Se3 nanowires by laser cutting
1
Department of Physics, Clarendon Laboratory, University of Oxford, Oxford
OX1 3PU, UK
2
Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, 14195
Berlin, Germany
3
Research Complex at Harwell, Rutherford Appleton Laboratory, Didcot, Oxfordshire
OX11 0FA, UK
a e-mail: thorsten.hesjedal@physics.ox.ac.uk
Received:
18
November
2013
Revised:
4
March
2014
Accepted:
11
March
2014
Published online:
1
April
2014
We present a method to control the length and diameter of Bi2Se3 nanowires through laser-cutting. Nanowires of the topologically insulating and thermoelectric material Bi2Se3 were grown using the vapor-liquid-solid method, and cut using a 532-nm-laser operating at a minimum power of 1 μW. The cutting process can be controlled through laser intensity and exposure time, and is based upon evaporation of Se from the nanowires. This method has many applications from pure research to device engineering.
© EDP Sciences, 2014
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