Eur. Phys. J. Appl. Phys.
Volume 65, Number 3, March 2014
|Number of page(s)||6|
|Section||Physics of Organic Materials and Devices|
|Published online||24 March 2014|
Effect of interface-dependent crystalline boundary on sub-threshold characteristics in a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistor
School of Electronics Engineering, Kyungpook National University, Daegu
702-701, Republic of Korea
a e-mail: firstname.lastname@example.org
Revised: 13 January 2014
Accepted: 11 February 2014
Published online: 24 March 2014
We demonstrate how the sub-threshold characteristics are affected by the density of crystalline domain boundaries directly governed by an organic semiconductor (OSC) – a gate insulator interface in a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) thin-film transistor (TFT). For generation of an engineered interface, a self assembled monolayer of octadecyltricholorosilane (OTS) was produced between a solution processed TIPS-pentacene film and a silicon dioxide layer. The interfacial charge trap density (Ntrap) deduced from the sub-threshold characteristics was significantly minimized after OTS treatment due to reduced crystal domain boundaries in the TIPS-pentacene film. In addition, the carrier mobility exhibits a value twice as large by OTS treatment. It is found that less crystal domain boundaries in the solution-processed OSC obtained from the engineered interface play an important role in inducing improved sub-threshold characteristics together with increased carrier mobility in organic TFTs.
© EDP Sciences, 2014
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