| Issue |
Eur. Phys. J. Appl. Phys.
Volume 65, Number 2, February 2014
|
|
|---|---|---|
| Article Number | 20702 | |
| Number of page(s) | 6 | |
| Section | Imaging, Microscopy and Spectroscopy | |
| DOI | https://doi.org/10.1051/epjap/2013130389 | |
| Published online | 14 February 2014 | |
https://doi.org/10.1051/epjap/2013130389
Instrumented nanoindentation and scanning electron transmission microscopy applied to the study of the adhesion of InP membranes heteroepitaxially bonded to Si
1
CNRS-Laboratoire de Photonique et des Nanostructures, UPR20, Route de Nozay, 91460 Marcoussis, France
2
Institut P’, CNRS-Université de Poitiers-ENSMA-UPR3346, SP2MI-Téléport, 2 Bd. Marie et Pierre Curie, BP 30179, 86962 Futuroscope-Chasseneuil Cedex, France
a e-mail: konstantinos.pantzas@lpn.cnrs.fr
Received:
26
August
2013
Revised:
24
October
2013
Accepted:
6
December
2013
Published online:
14
February
2014
Instrumented nanoindentation and STEM have been combined ex situ to study the adhesion of 450 nm thick InP membranes to Si substrates. Three distinct regimes are identified in the deformation of the InP/Si stacks during these experiments: the first is plastic flow of InP at low loads; the second is elastic debonding of the InP membrane, far from the indented zone at medium loads; lastly, the local amorphisation of the underlying Si substrate at high loads. The regime of intermediate loads is shown to be particularly useful in the evaluation of the surface bonding energy of InP to Si.
© EDP Sciences, 2014
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