| Issue |
Eur. Phys. J. Appl. Phys.
Volume 63, Number 3, September 2013
|
|
|---|---|---|
| Article Number | 30301 | |
| Number of page(s) | 5 | |
| Section | Thin Films | |
| DOI | https://doi.org/10.1051/epjap/2013130305 | |
| Published online | 03 September 2013 | |
https://doi.org/10.1051/epjap/2013130305
Epitaxy surface effect on the critical properties of a ferroelectric thin film
College of Mechanical Engineering, Linyi University, Linyi 276005, P.R. China
a e-mail: phylzx@gmail.com
Received:
27
June
2013
Revised:
9
August
2013
Accepted:
12
August
2013
Published online:
3
September
2013
The characteristic properties, the critical surface transverse field Ωsc and the Curie temperature Tc, for an N-layer ferroelectric thin film with epitaxy surface layers Ns described by the transverse field Ising model have been studied by the differential operator technique within the framework of effective-field theory with correlations. The analytical equation for the phase diagrams of ferroelectric thin films is derived. The surface transverse field Ωs dependence of the Curie temperature Tc in the ferroelectric thin film with different epitaxy surface layers is calculated. Meanwhile the epitaxy surface layer number Ns dependence of the critical surface transverse field Ωsc and the Curie temperature Tc is also examined. The results show that the critical properties depend heavily on modifications of interchange interactions and transverse fields in the epitaxy surface layer.
© EDP Sciences, 2013
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