| Issue |
Eur. Phys. J. Appl. Phys.
Volume 63, Number 2, August 2013
|
|
|---|---|---|
| Article Number | 20101 | |
| Number of page(s) | 6 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2013130172 | |
| Published online | 27 August 2013 | |
https://doi.org/10.1051/epjap/2013130172
Studies on transport properties of MoSe2−xTex single crystals
Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388120, Gujarat, India
a e-mail: div.bhavsar@gmail.com
Received:
8
April
2013
Revised:
26
July
2013
Accepted:
31
July
2013
Published online:
27
August
2013
Single crystals of MoSe2−xTex (x = 0.25, 0.5, 1, 1.5, 1.75) were grown by chemical vapor transport technique. The stoichiometric composition of grown crystals was confirmed by energy dispersive X-ray spectroscopy. Transport properties like electrical resistivity, Seebeck co-efficient measurements at high temperature and Hall effect at room temperature were studied on these samples. The obtained results are discussed in details in this paper.
© EDP Sciences, 2013
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