Eur. Phys. J. Appl. Phys.
Volume 63, Number 2, August 2013
|Number of page(s)||6|
|Section||Semiconductors and Devices|
|Published online||27 August 2013|
Studies on transport properties of MoSe2−xTex single crystals
Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388120, Gujarat, India
a e-mail: email@example.com
Revised: 26 July 2013
Accepted: 31 July 2013
Published online: 27 August 2013
Single crystals of MoSe2−xTex (x = 0.25, 0.5, 1, 1.5, 1.75) were grown by chemical vapor transport technique. The stoichiometric composition of grown crystals was confirmed by energy dispersive X-ray spectroscopy. Transport properties like electrical resistivity, Seebeck co-efficient measurements at high temperature and Hall effect at room temperature were studied on these samples. The obtained results are discussed in details in this paper.
© EDP Sciences, 2013
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