| Issue |
Eur. Phys. J. Appl. Phys.
Volume 62, Number 3, June 2013
|
|
|---|---|---|
| Article Number | 30104 | |
| Number of page(s) | 8 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2013130165 | |
| Published online | 18 June 2013 | |
https://doi.org/10.1051/epjap/2013130165
The set of photoelectromagnetic methods for determination of recombination and diffusion parameters of p-MCT thin films
1
Rzhanov Institute of Semiconductor Physics, pr. Lavrentieva, 13, Novosibirsk 630090, Russia
2
Siberian State Geodetic Academy, Plakhotnov str., 8, Novosibirsk 630108, Russia
a e-mail: protasov@isp.nsc.ru
Received:
5
April
2013
Accepted:
23
May
2013
Published online:
18
June
2013
In this paper the set of photoelectromagnetic methods for determination of recombination and diffusion parameters of charge carriers in p-type mercury cadmium telluride epitaxial thin films at temperature range 77–125 K is offered. The set of methods includes the photoconductivity in magnetic field for Faraday and Voigt geometries, the photoelectromagnetic effect, the Hall effect and the measurements of magnetoconductivity. Such films parameters as concentrations and mobilities of heavy and light holes, mobility of minor electrons, electrons lifetime and ratio between holes and electrons lifetimes, surface recombination velocities can be determined with help of offered set.
© EDP Sciences, 2013
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