| Issue |
Eur. Phys. J. Appl. Phys.
Volume 62, Number 2, May 2013
|
|
|---|---|---|
| Article Number | 20102 | |
| Number of page(s) | 5 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2013120298 | |
| Published online | 30 April 2013 | |
https://doi.org/10.1051/epjap/2013120298
Selective plasma etching treatment of the screen-printed carbon nanotube cold cathode
Hubei Province Key Laboratory of Refractories and Ceramics, Wuhan University of Science and Technology, Wuhan 430081, P.R. China
a e-mail: yjwust@163.com
Received:
30
July
2012
Revised:
31
October
2012
Accepted:
18
February
2013
Published online:
30
April
2013
A high-precision printing and patterning carbon nanotube (CNT) cathode was prepared using the screen-printing method. Selective plasma etchings were introduced to improve field emission properties of the CNT cathode through the reactive ion etching (RIE) system. The field emission characteristics and mechanism of the cathode after etching treatment were studied. It was found that the reactive ion etching could effectively expose plentiful CNTs inside the cathode and protrude them from the surface. Moreover, with the increase of RIE operation pressure, CNT cathode field emission behavior changed from metal-insulation medium-vacuum (MIV) to a classical metallic-microprotrusion (MM) structure field emission model. The results showed that only the cathode with appropriate RIE operation pressure etching has a low operation field and a high emission current density.
© EDP Sciences, 2013
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