Eur. Phys. J. Appl. Phys.
Volume 61, Number 3, March 2013
|Number of page(s)||4|
|Section||Physics of Organic Materials and Devices|
|Published online||26 February 2013|
Low-voltage organic complementary inverters fabricated with pentacene/SrTiO3 and C60/SrTiO3 field-effect transistors
College of Chemistry and Molecular Engineering, Zhengzhou University, 100 Kexue Road, Zhengzhou 450001, P.R. China
2 Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, 4-4-37 Takeda, Kofu 400-8511, Japan
Revised: 25 December 2012
Accepted: 8 January 2013
Published online: 26 February 2013
Organic complementary inverters were fabricated with low-voltage pentacene/SrTiO3 and C60/SrTiO3 field-effect transistors (FETs), without formation of self-assembled monolayer on surface of the dielectric SrTiO3. The inverters showed the highest gain of 18.4 at an operating voltage as low as 3 V, where the pentacene/SrTiO3 and C60/SrTiO3 FETs on the inverters showed hole and electron mobilities of 0.85 and 0.07 cm2/V s with threshold voltages (VT) of −1.1 and −0.2 V, respectively.
© EDP Sciences, 2013
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