| Issue |
Eur. Phys. J. Appl. Phys.
Volume 58, Number 3, June 2012
|
|
|---|---|---|
| Article Number | 30401 | |
| Number of page(s) | 4 | |
| Section | Nanomaterials and Nanotechnologies | |
| DOI | https://doi.org/10.1051/epjap/2012110488 | |
| Published online | 06 June 2012 | |
https://doi.org/10.1051/epjap/2012110488
Fabrication of low-pressure low-voltage field ionization gas sensor using pure and Al-doped ZnO nanowires
Nanophysics Research Laboratory, Department of Physics, University of Tehran, 1439955961 Tehran, Islamic Republic of Iran
a e-mail: arzi@khayam.ut.ac.ir
Received:
28
December
2011
Revised:
4
April
2012
Accepted:
9
May
2012
Published online:
6
June
2012
Zinc oxide nanowires were synthesized by a simple chemical method using zinc acetate dihydrate, polyvinylpyrrolidone (PVP) and DI water as precursor, capping and solvent, respectively. Aluminum-doped ZnO nanowires were also synthesized by adding AlCl3 during the growth process. Both types of nanowires were used to fabricate a novel field ionization based gas sensor. The high sensitivity in low pressures, low working voltages, very low recovery time and good selectivity are the main advantages of these fabricated sensors. Electrical characteristics of the fabricated sensors were investigated while being exposed to several gases. Scanning electron microscopy (SEM) was used to analyze the nanowires structures.
© EDP Sciences, 2012
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