Eur. Phys. J. Appl. Phys.
Volume 58, Number 2, May 2012
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||25 May 2012|
Effect of rapid oxidation on optical and electrical properties of silicon nanowires obtained by chemical etching
Laboratoire de photovoltaïque, Centre de Recherches et des Technologies de l’Énergie, Technopole de Borj-Cédria BP 95, 2050 Hammam-Lif, Tunisia
2 Laboratoire de Photonique et de Nanostructures, CNRS Route Nozay, 91460 Marcoussis, France
3 Unité de Physique des dispositifs à Semi-conducteurs UPDS, Faculté des Sciences de Tunis, Campus Universitaire, 2092 Tunis, Tunisia
a e-mail: email@example.com
Revised: 23 April 2012
Accepted: 26 April 2012
Published online: 25 May 2012
In the present work, we report the investigation of passivated silicon nanowires (SiNWs) having an average radius of 3.7 μm, obtained by chemical etching of p-type silicon (p-Si). The surface passivation of the SiNWs was performed through a rapid oxidation conducted under a controlled atmosphere at different temperatures and durations. The morphology of the SiNWs was examined using a scanning electron microscope (SEM) that revealed a wave-like structure of dense and vertically aligned one-dimensional silicon nanostructures. On the other hand, optical and electrical characterizations of the SiNWs were studied using a UV-Vis-NIR spectrometer, the Fourier transform infrared spectroscopy (FTIR) and I-V measurements. The reflectance of SiNWs has been dropped to approximately 2% in comparison to that of bare p-Si. This low reflectance slightly increased after carrying out the rapid thermal annealing. The observed behavior was attributed to the formation of a SiO2 layer, as confirmed by FTIR measurements. Finally, the electrical measurements have shown that the rapid oxidation, at certain conditions, contributes to the improvement of the electrical responses of the SiNWs, which can be of great interest for photovoltaic applications.
© EDP Sciences, 2012
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