Eur. Phys. J. Appl. Phys.
Volume 58, Number 2, May 2012
|Number of page(s)||4|
|Published online||25 May 2012|
Effect of N doping on hole density of Cu2O:N films prepared by the reactive magnetron sputtering method
College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P.R. China
2 Department of Physics, Nanjing University, Nanjing 210093, P.R. China
a e-mail: firstname.lastname@example.org
Revised: 16 March 2012
Accepted: 17 April 2012
Published online: 25 May 2012
N-doped Cu2O thin films have been deposited on glass substrate by reactive magnetron sputtering method under various N2/O2 flow ratios from 0 to 1.0. The structural and electronic properties of Cu2O:N films were investigated by X-ray diffraction (XRD), four-point probe and Hall effect measurements. XRD pattern showed that crystalline structures of all the samples retained single phase of Cu2O with the increase of N2/O2 flow ratio from 0 to 1.0. However, the crystalline quality of Cu2O:N films reduced with the increase of the N2/O2 flow ratio. The phenomenon of peak shift of Cu2O(1 1 1) implied that N atoms have been doped into Cu2O film. The square resistance of Cu2O:N films linearly decreased from 28.1 to 1.5 (104 Ω/☐) with the increase of N2/O2 flow ratio from 0.2 to 0.6 initially, and then it changed slowly with the increase of N2/O2 flow ratio from 0.8 to 1.0. Hole density of Cu2O:N films with various N2/O2 flow ratios from 0 to 0.6 was measured using the Van der Pauw method. All the samples are p-type, and the hole density of Cu2O:N films was enhanced from 1.2 × 1016 cm−3 to 3.1 × 1019 cm−3 with the increase of N2/O2 flow ratio from 0 to 0.6. The experimental results demonstrated that N doping was an effective method to enhance hole density of p-type Cu2O film.
© EDP Sciences, 2012
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