Eur. Phys. J. Appl. Phys.
Volume 58, Number 2, May 2012
|Number of page(s)||4|
|Published online||25 May 2012|
Effect of N doping on hole density of Cu2O:N films prepared by the reactive magnetron sputtering method
College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, P.R. China
2 Department of Physics, Nanjing University, Nanjing 210093, P.R. China
a e-mail: email@example.com
Revised: 16 March 2012
Accepted: 17 April 2012
Published online: 25 May 2012
N-doped Cu2O thin films have been deposited on glass substrate by reactive magnetron sputtering method under various N2/O2 flow ratios from 0 to 1.0. The structural and electronic properties of Cu2O:N films were investigated by X-ray diffraction (XRD), four-point probe and Hall effect measurements. XRD pattern showed that crystalline structures of all the samples retained single phase of Cu2O with the increase of N2/O2 flow ratio from 0 to 1.0. However, the crystalline quality of Cu2O:N films reduced with the increase of the N2/O2 flow ratio. The phenomenon of peak shift of Cu2O(1 1 1) implied that N atoms have been doped into Cu2O film. The square resistance of Cu2O:N films linearly decreased from 28.1 to 1.5 (104 Ω/☐) with the increase of N2/O2 flow ratio from 0.2 to 0.6 initially, and then it changed slowly with the increase of N2/O2 flow ratio from 0.8 to 1.0. Hole density of Cu2O:N films with various N2/O2 flow ratios from 0 to 0.6 was measured using the Van der Pauw method. All the samples are p-type, and the hole density of Cu2O:N films was enhanced from 1.2 × 1016 cm−3 to 3.1 × 1019 cm−3 with the increase of N2/O2 flow ratio from 0 to 0.6. The experimental results demonstrated that N doping was an effective method to enhance hole density of p-type Cu2O film.
© EDP Sciences, 2012
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.