Eur. Phys. J. Appl. Phys.
Volume 58, Number 1, April 2012
|Number of page(s)||6|
|Section||Plasma, Discharges and Processes|
|Published online||29 March 2012|
Electrical and morphological analysis of oxygen plasma treated Zn metal thin films
Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Pulau Penang, Malaysia
a e-mail: firstname.lastname@example.org
Revised: 31 January 2012
Accepted: 2 March 2012
Published online: 29 March 2012
RF sputtered Zn metal films were processed at O2 plasma at various process conditions. The surface morphology of the processed films was characterized using SEM and AFM techniques. Dense and continuous film surface with good surface morphology were observed in all plasma processed films. The microstructure of processed Zn films was very much dependent on the process parameters especially the plasma power and gas flow rate. The effect of these parameters on particle size and surface roughness was examined carefully. The particle size of all processed films lay in between 23 and 70 nm. Noticeable change on surface morphology, particle size and surface roughness was observed with respect to process parameters. The observed sheet resistance was an evidence of the influence of process parameters especially process time on the electrical properties of processed films. In addition, the influence of surface roughness and particle size on electrical resistance was also discussed.
© EDP Sciences, 2012
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