| Issue |
Eur. Phys. J. Appl. Phys.
Volume 57, Number 2, February 2012
|
|
|---|---|---|
| Article Number | 21301 | |
| Number of page(s) | 4 | |
| Section | Surfaces and Interfaces | |
| DOI | https://doi.org/10.1051/epjap/2011110348 | |
| Published online | 23 December 2011 | |
https://doi.org/10.1051/epjap/2011110348
Stain-etched porous silicon nanostructures for multicrystalline silicon-based solar cells
Laboratoire de PhotovoltaΪque, Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia
Received:
5
September
2011
Revised:
4
November
2011
Accepted:
9
November
2011
Published online:
23
December
2011
In this paper, we study the optical, optoelectronic and photoluminescence properties of stain-etched porous silicon nanostructures obtained with different etching times. Special attention is given to the use of the stain-etched PS as an antireflection coating as well as for surface passivating capabilities. The surface morphology has been analyzed by scanning electron microscopy. The evolution of the Si-O and Si-H absorption bands was analyzed by Fourier transform infrared spectrometry before and after PS treatment. Results show that stain etching of the silicon surface drops the total reflectivity to about 7% in the 400–1100 nm wavelength range and the minority carrier lifetime enhances to about 48 μs.
© EDP Sciences, 2011
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