Eur. Phys. J. Appl. Phys.
Volume 57, Number 1, January 2012
|Number of page(s)||8|
|Section||Surfaces and Interfaces|
|Published online||02 December 2011|
Dispersions of propagating optical phonons and electron-phonon interactions in wurtzite GaN/ZnO quantum wells
Department of Physics, Shaanxi University of Technology, Hanzhong 723001, Shaanxi, P.R. China
2 College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, Henan, P.R. China
a e-mail: email@example.com
Accepted: 3 October 2011
Published online: 2 December 2011
Based on the dielectric-continuum model and Loudon’s crystal model, the propagating optical phonons and electron-phonon interactions are studied by using the determinate method. The dispersions and electron-phonon coupling functions of the propagating optical phonons are investigated for wurtzite GaN/ZnO single quantum well (QW). The numerical results show that there are infinite propagating phonon branches by a quantum number m in the two regions. The propagating optical phonons are more dispersive for decreasing m. Moreover, the electron-phonon coupling functions have oscillating behavior in barrier layer (GaN), the periods of electron-phonon coupling functions in low frequency region are larger than those in high frequency region. The electron-phonon coupling functions of propagating phonon modes in low frequency region are more important than those in high frequency region.
© EDP Sciences, 2011
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