| Issue |
Eur. Phys. J. Appl. Phys.
Volume 56, Number 1, October 2011
|
|
|---|---|---|
| Article Number | 10105 | |
| Number of page(s) | 8 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2011110250 | |
| Published online | 28 September 2011 | |
https://doi.org/10.1051/epjap/2011110250
General self-energy-based formulation of levels coupling in quantum confined structures★
Dipartimento di Elettronica, Politecnico di Torino, Torino 10126, Italy
a e-mail: marco.vallone@polito.it
Received:
15
June
2011
Accepted:
19
August
2011
Published online:
28
September
2011
The effect of coupling between levels in quantum wells or quantum dots is described in Green’s function formalism. The structure eigenvalues are shown to have a Brillouin-Wigner continued-fraction expression that allows to give a general and intuitive meaning to levels coupling, described in terms of an off-diagonal self-energy. The concept of coupling is linked to a general potential matrix and can be given the same mathematical form for all kinds of coupling (inter- and intra-quantum dot and quantum well), in which off-diagonal self-energy contributions assume each time a different conceptual meaning. Furthermore, the same scheme, based on off-diagonal self-energies, allows to evaluate renormalization contribution due to each structure energy level in a natural and easy way.
© EDP Sciences, 2011
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