Eur. Phys. J. Appl. Phys.
Volume 56, Number 1, October 2011
|Number of page(s)||7|
|Section||Nanomaterials and Nanotechnologies|
|Published online||28 September 2011|
Improvement of saturation optical intensity in electroabsorption modulators with asymmetric intra-step-barrier coupled double strained quantum wells
Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, G.C. 1983963113, Tehran, Islamic Republic of Iran
a e-mail: firstname.lastname@example.org
Accepted: 12 August 2011
Published online: 28 September 2011
In this article, the saturation optical intensity in electroabsorption modulators (EAMs) at 1.55 μm with asymmetric intra-step-barrier coupled double strained quantum well (AICD-SQWs) active region is theoretically investigated and compared with intra-step quantum well (IQW) structure. For this purpose, the two basic escape processes, thermionic emission and tunneling, are considered and the escape times of photogenerated carriers both for the AICD-SQW and the IQW based on the InGaAlAs material system are calculated and compared. From the reduction in escape times, improvement in the saturation optical intensity due to the introduction of the AICD-SQW structure is estimated to be greater than 6 dB at high fields.
© EDP Sciences, 2011
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.