Magnetoresistance studies and optimization of deposition parameters of pulsed electron deposited La_0.6Pb_0.4Mn_0.8Ru_0.2O₃ thin films

¹ Centre of Material Sciences, University of Allahabad, Allahabad 211002, India
² Materials Chemistry Laboratory, Indian Institute of Technology Kanpur, Kanpur 208016, India
³ Department of Materials Science and Engineering, University of Maryland, MD 20742-4111, USA

^a e-mail: brajendr@gmail.com
^b e-mail: ssundar@iitk.ac.in

Received: 11 November 2010
Revised: 8 March 2011
Accepted: 28 April 2011
Published online: 11 August 2011

Abstract

We document the magnetotransport properties of multicomponent La_0.6Pb_0.4Mn_0.8Ru_0.2O₃ oxide thin films deposited using Pulsed Electron Deposition. This is a model composition in this series, which shows adequate hole transport aided by the presence of both Mn⁴⁺ and Ru⁵⁺ ions with similar t_2gand e_g parentage. The optimized metal to insulator transition temperature (Tmit) of the film has been found to be ~298 K and the magnetoresistance (—MR%) ratio of about —65% near the T_mit was observed for the La_0.6Pb_0.4Mn_0.8Ru_0.2O₃ thin films. High-Resolution Transmission Electron Microscopy (HRTEM) studies reveal a good epitaxial growth along the (0 0 1) direction on LaAlO₃ (LAO) substrate, with the width of the rocking curves (ω scans) <0.6°.