Eur. Phys. J. Appl. Phys.
Volume 55, Number 2, August 2011
|Number of page(s)||8|
|Published online||11 August 2011|
Magnetoresistance studies and optimization of deposition parameters of pulsed electron deposited La0.6Pb0.4Mn0.8Ru0.2O3 thin films
Centre of Material Sciences, University of Allahabad, Allahabad 211002, India
2 Materials Chemistry Laboratory, Indian Institute of Technology Kanpur, Kanpur 208016, India
3 Department of Materials Science and Engineering, University of Maryland, MD 20742-4111, USA
Revised: 8 March 2011
Accepted: 28 April 2011
Published online: 11 August 2011
We document the magnetotransport properties of multicomponent La0.6Pb0.4Mn0.8Ru0.2O3 oxide thin films deposited using Pulsed Electron Deposition. This is a model composition in this series, which shows adequate hole transport aided by the presence of both Mn4+ and Ru5+ ions with similar t2gand eg parentage. The optimized metal to insulator transition temperature (Tmit) of the film has been found to be ~298 K and the magnetoresistance (—MR%) ratio of about —65% near the Tmit was observed for the La0.6Pb0.4Mn0.8Ru0.2O3 thin films. High-Resolution Transmission Electron Microscopy (HRTEM) studies reveal a good epitaxial growth along the (0 0 1) direction on LaAlO3 (LAO) substrate, with the width of the rocking curves (ω scans) <0.6°.
© EDP Sciences, 2011
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