Eur. Phys. J. Appl. Phys.
Volume 55, Number 1, July 2011
|Number of page(s)||5|
|Published online||21 July 2011|
Photovoltaic responses of ZnO/Si heterojunctions synthesized by sol-gel method
Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, P.R. China
2 State Key Laboratory of Petroleum Resource and Prospecting, China University of Petroleum, Beijing 102249, P.R. China
3 International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, P.R. China
Revised: 5 August 2010
Accepted: 15 March 2011
Published online: 21 July 2011
ZnO/Si heterojunctions were prepared by the sol-gel method and hexagonal polycrystalline wurtzite structures with pores were observed by a field emission scanning electron microscope. The steady photovoltage properties of ZnO/Si heterojunctions were obtained under the illumination of a 532 nm continuum solid state laser with a 50 Hz chopper. In addition ns photoresponse signals were found when the samples were excited by a ps pulsed laser at room temperature. A possible mechanism was proposed to describe the photovoltaic process in the ZnO/Si heterojunction.
© EDP Sciences, 2011
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