Eur. Phys. J. Appl. Phys.
Volume 53, Number 3, March 2011
|Number of page(s)||5|
|Published online||22 February 2011|
Resistance and 1/f noise between circular contacts on conductive thin films
Université Lille Nord de France, 59000 Lille, France
2 Unité de Dynamique et Structure des Matériaux Moléculaires, Université du Littoral Côte d'Opale, 50 rue F. Buisson, BP 717, 62228 Calais, France
3 Eindhoven University of Technology, Department of Electrical Engineering PT 913, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Corresponding author: Liang@univ-littoral.fr
Accepted: 21 December 2010
Published online: 22 February 2011
There is a need to characterize the quality of contacts and the noise properties of new materials deposited or grown as thin films. Poor contacts are interface dominated. Perfect contacts have a negligible interface contribution and there is only a resistance and noise contribution from outside the contact region. The presence of current crowding enhances the resistance and noise contribution. Such contacts are called constriction dominated contacts. The conductive film is characterized by its sheet resistance and normalized conductance fluctuations for a unit surface. The resistance and noise is studied between two circular top electrodes of the same diameter on the conductive. To distinguish between perfect and poor contacts and to characterize the thin film in case of good contacts, we need a set of contacts with different diameters. Models for perfect and poor contacts are investigated. The scaling of resistance and noise with contact radius r is for interface dominated poor contacts: Ri 1/r2 and SRi 1/r6. In contrast, perfect contacts with contact diameter (2r) much smaller than the distance between the centers (2b) show: Rc ln(b/r) and SRc 1/r2. From the resistance and noise measurements between constriction dominated perfect contacts, the sheet resistance and normalized noise of the thin film are calculated.
© EDP Sciences, 2011
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