Tunable dual-mode DFB laser for millimetre-wave signal generation

¹ Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR 8520, Université Lille 1, Avenue Poincaré, BP 60069, 59652 Villeneuve d'Ascq Cedex, France
² Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France

Corresponding author: stephane.ginestar@ies.univ-montp2.fr

Received: 5 February 2010
Revised: 10 November 2010
Accepted: 17 January 2011
Published online: 22 February 2011

Abstract

Highly compact dual-mode semiconductor laser sources get more and more attention in different application fields such as radar, security and personal communication systems. When the two generated wavelengths are detected within the same photodetector, an electrical signal which frequency is the difference between the frequencies of the two optical modes will be issued. We report on an integrated semiconductor device which is composed of two in-line DFB sections that are using the same optical waveguide structure. The so generated dual-mode spectrum can be adjusted first, by the difference in the grating parameters of each DFB section and second, by their respective driving current. We will report on the characterisation of such a device focusing on tunability and linewidth aspects that are of prime importance in above mentioned applications.