Eur. Phys. J. Appl. Phys.
Volume 53, Number 1, January 2011
|Number of page(s)||5|
|Published online||23 December 2010|
Effect of gamma irradiation on the shallow defect states of hydrogenated amorphous silicon films
Department of Physical Engineering, Faculty of Engineering, Ankara
University, 06100 Ankara, Turkey
2 Department of Physics, Faculty of Science and Arts, Ahi Evran University, 40040 Kirsehir, Turkey
Corresponding author: email@example.com
Accepted: 30 September 2010
Published online: 23 December 2010
The temperature dependence of the electrical conductivity before and after gamma irradiation of hydrogenated amorphous silicon (a-Si:H) films, prepared by the hot wire method, at a dose of 2 kGy of 60Co gamma irradiation are presented and discussed. Fourier transform infrared spectroscopy (FTIR) measurements provide useful information on the characteristics of bond configurations in a-Si:H before and after gamma irradiation. The conductivity increased and the bond configurations changed significantly after gamma irradiation. The results are explained by the filling of shallow donor states and variation of bond type due to migration of hydrogen atoms under the effect of irradiation. The behaviour of the conductivity is consistent with a hopping mechanism. The temperature dependence of the conductivity of a-Si:H exhibits a law, instead of the law, after gamma irradiation.
© EDP Sciences, 2010
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