| Issue |
Eur. Phys. J. Appl. Phys.
Volume 51, Number 1, July 2010
|
|
|---|---|---|
| Article Number | 10604 | |
| Number of page(s) | 5 | |
| Section | Nanomaterials and Nanotechnologies | |
| DOI | https://doi.org/10.1051/epjap/2010084 | |
| Published online | 24 June 2010 | |
https://doi.org/10.1051/epjap/2010084
Sixteen resistive states of a tunnel junction with a composite barrier
1
Faculty of Materials, Optoelectronics and Physics, Xiangtan
University, Hunan, 411105, P.R. China
2
Key Laboratory of Low Dimensional Materials and Application Technology, Xiangtan University, Ministry of Education, Xiangtan, Hunan, 411105, P.R. China
Corresponding author: mhtang@xtu.edu.cn
Received:
12
March
2010
Accepted:
10
May
2010
Published online:
24
June
2010
A new model for a tunnel junction with a ferroelectric-ferromagnetic-ferroelectric composite barrier and two magnetic electrodes is evaluated. By reversing the electric polarisation in the ferroelectric layers and the magnetisation in the electrodes independently or simultaneously, sixteen distinct resistive states are obtained successfully. The tunnelling electroresistance ratio, the spin-filtering ratio and the conductance as functions of the barrier thickness, the exchange splitting and the electric polarisation are also investigated in detail. Compared with conventional tunnel junctions, our theoretical model presents more resistive states that potentially may lead to a tremendous increase in multivalue logic state storage in next generation memory cells.
© EDP Sciences, 2010
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